RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1974 Volume 1, Number 5, Pages 1220–1222 (Mi qe8152)

This article is cited in 1 paper

Brief Communications

Investigation of injection lasers with a wide active region

V. I. Borodulin, V. P. Konyaev, G. N. Malyavkina, G. T. Pak, A. I. Petrov, N. A. Prudnikova, V. I. Shveikin


Abstract: An investigation was made of the dependence of the threshold current density and of the differential quantum efficiency of AlAs-GaAs heterojunction lasers on the width of the active region. It was found that the excitation of higher modes reduced the efficiency when the width of the active region was increased.

UDC: 621.378.35

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh, 42.60.Da

Received: 03.12.1973


 English version:
Soviet Journal of Quantum Electronics, 1974, 4:5, 670–671


© Steklov Math. Inst. of RAS, 2024