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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 9, Pages 1945–1952 (Mi qe8227)

This article is cited in 14 papers

Determination of the spectral dependences of the absolute quantum yields of XeF(B, C, D) excimers in photolysis of XeF2

N. K. Bibinov, I. P. Vinogradov, L. D. Mikheev, D. B. Stavrovskiĭ


Abstract: Photolysis of XeF2 accompanied by the formation of excited XeF(B, C, D) molecules is of interest since this reaction is used in optically pumped excimer lasers. The present paper reports an investigation of the photolysis of gaseous XeF2 in the 220–108 nm spectral range. It was established that the maximum quantum yields of XeF(B) and XeF(C) in the 140–180 nm range are 30 ±9 and 3.5 ± 1%, respectively (λmax≈165 nm). The quantum yield of XeF(D) in this range does not exceed 1.5%. A mechanism for decay of excited XeF2 molecules is discussed. It is found that several electronic transitions make a contribution to the XeF2 absorption band which has a maximum at 158 nm. It is postulated that a transition to the 1Πg or 3Πu states in this band results in the formation of XeF(D), a transition to the 1Πu state results in the formation of XeF(X or A), and transitions to the 1Σu+ and 3Σu+ states result in the formation of XeF(B) and XeF(C), respectively.

UDC: 535.37:621.375.826

PACS: 33.80.Gj

Received: 09.03.1981


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:9, 1178–1181

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