Electron-beam and optical strength of semiconductors subjected to pulsed excitation by a high-intensity electron beam

Brittle fracture, initiated by initial polishing defects and low-angle boundaries, occurred in semiconductor crystals under the action of a high-intensity pulsed electron beam. The damage threshold increased along the series of compounds CdS, ZnSe, ZnO, and GaAs. A reduction in the diameter of the irradiated region increased the electron-beam damage threshold. In contrast to the electron-beam interaction, the high-intensity radiation generated as a result of lasing of the semiconductor crystals caused local melting because of the strong absorption of light near the initial microdefects.