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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 9, Pages 1994–1996 (Mi qe8309)

This article is cited in 2 papers

Brief Communications

Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs

V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina


Abstract: An experimental investigation was made of the influence of the material used to bury mesastripe GalnPAs–lnP laser heterostructures emitting in the 1.3 μ wavelength range on the order of the transverse modes of the laser radiation. Indium phosphide or GalnPAs (with a 1.17 eV band gap) were used for burial. It was found that the maximum single-mode width of the emission zone increased from 3 μ in the first case to ~9 μ in the second case (for an active layer 0.25 μ thick). Leaky-mode lasing was obtained in an "antiguiding" strip structure with a thickness of 0.13 μ. Some characteristics of burial using a quaternary solid solution are discussed.

UDC: 621.378.3

PACS: 42.55.Px, 73.40.Lq

Received: 14.05.1981


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:9, 1208–1209

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