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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1986 Volume 13, Number 12, Pages 2491–2496 (Mi qe8516)

This article is cited in 4 papers

Features of lasing in active media utilizing NaF:Me2+ crystals containing F2+-like centers

N. A. Ivanov, V. D. Lokhnygin, A. A. Fomichev, V. M. Khulugurov


Abstract: A study of NaF crystals doped with bivalent metals Ca, Mg, or Mn revealed the presence of F aggregate centers comprising an F2 center adjacent to an Me2+-υc impurity-vacancy dipole. Excitation by laser radiation in the absorption band of these centers ionized them to F2+(Me) centers. Efficient lasing tunable within the luminescence band of the F2+(Me) centers was achieved. In this case, the F2+(Me) centers were generated and excited by radiation of the same wavelength (λ = 659 nm). The lasing characteristics of this laser were studied.

UDC: 621.373.826.038.825.2

PACS: 42.55.Rz, 42.60.By, 42.60.Lh, 42.60.Fc, 42.60.Jf, 42.70.Hj

Received: 21.10.1985


 English version:
Soviet Journal of Quantum Electronics, 1986, 16:12, 1645–1648

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© Steklov Math. Inst. of RAS, 2025