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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1979 Volume 6, Number 1, Pages 5–24 (Mi qe8559)

Molecular beam epitaxy — a promising method for fabrication of integrated–optics devices. I. Injection lasers (review)

Yu. V. Gulyaev, G. G. Dvoryankina, V. F. Dvoryankin, N. Ya. Cherevatskiĭ


Abstract: A review is given of the fabrication of laser double heterostructures using molecular beam epitaxy (MBE). A comparison is made of the properties of injection lasers fabricated by MBE and by liquid phase epitaxy. The achievements and potential applications of MBE in the fabrication of such high-quality devices are assessed.

UDC: 539.234:621.375.8.038.825.4

PACS: 68.55.+b, 42.55.Px, 81.15.Ef

Received: 30.01.1978


 English version:
Soviet Journal of Quantum Electronics, 1979, 9:1, 1–12


© Steklov Math. Inst. of RAS, 2024