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Kvantovaya Elektronika, 1996 Volume 23, Number 12, Pages 1069–1071 (Mi qe868)

This article is cited in 7 papers

Lasers

Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents

I. V. Akimovaa, P. G. Eliseeva, M. A. Osinskib, P. Perlinb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b University of New Mexico, USA

Abstract: An investigation was made of the electroluminescence spectra of a structure with an InxGa1–xN (3 nm thick) quantum well pumped by current pulses of up to 4 kA cm–2 density at T = 77 and 300 K. Considerable spectral broadening (ΔE = 150 — 200 meV) of nonthermal nature was observed. A preliminary study was made of the stability of this light-emitting structure pumped by high-current pump pulses.

PACS: 85.60.Jb, 85.30.Vw, 78.60.Fi

Received: 01.01.1996


 English version:
Quantum Electronics, 1996, 26:12, 1039–1041

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