Mechanism of stimulated emission from laser screens made of II-VI semiconductor compounds

The characteristics of laser screens made of II-VI semiconductor compounds (and designed to operate in electron-beam tubes) were investigated in the range 80–300°K. The spectral characteristics of spontaneous and stimulated emission and the threshold parameters were determined. It was concluded from these data that, in the temperature range, 80–300°K the laser action in these screens occurred as a result of radiative recombination in a degenerate electron-hole plasma.