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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 12, Pages 2693–2695 (Mi qe8944)

This article is cited in 3 papers

Brief Communications

Q switching of a resonator by the metal–semiconductor phase transition

A. A. Bugaev, B. P. Zakharchenya, F. A. Chudnovskiĭ


Abstract: An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal–semiconductor transition. The nonlinearity of the reflection coefficient was due to initiation of this phase transition by laser radiation. A determination was made of the parameters of a giant radiation pulse obtained using such a passive switch with a vanadium oxide film.

UDC: 621.378

PACS: 42.55.Rz, 42.60.Da

Received: 02.04.1981


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:12, 1638–1639

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© Steklov Math. Inst. of RAS, 2024