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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2005 Volume 35, Number 9, Pages 787–790 (Mi qe9165)

This article is cited in 1 paper

Lasers

Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum

P. G. Eliseevab, Ch. Liub, H. Caob, M. A. Osinskib

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: Mode-beating spectra and their current and temperature dependences are studied in a semiconductor laser. In the mode-beating spectrum of InGaAs quantum well lasers, the anomalous splitting of the difference-frequency line into three components f0, f+ and f- is observed. The splitting increases with increasing optical power above the threshold. The component f0 is less mobile and shifts to the red with increasing temperature. The component f+ shifts to the blue, whereas the weak f0 component shifts to the red. The difference f+-f0 amounts to 400 MHz, which is ~5% of the value of f0 in a 5-mm long diode cavity. No anomalous splitting was observed in quantum dot lasers.

PACS: 42.55.Px

Received: 02.06.2005


 English version:
Quantum Electronics, 2005, 35:9, 787–790

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