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Kvantovaya Elektronika, 1989 Volume 16, Number 10, Pages 2020–2022 (Mi qe9208)

Solid-state and semiconductor lasers

Laser effect in PbSSe compounds pumped longitudinally with an electron beam

O. V. Bogdankevich, S. V. Dryagin, A. D. Konovalov, G. A. Meerovich, Yu. G. Selivanov, V. A. Stepushkin, V. N. Ulasyuk, M. P. Chebotarev, A. P. Shotov


Abstract: An investigation was made of the characteristics of lasing of semiconductor (lead chalcogenide) active elements pumped longitudinally by an electron beam. The dependences of the threshold current and of the lasing efficiency on the temperature of an active element and on the electron energy were determined.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh

Received: 16.02.1989


 English version:
Soviet Journal of Quantum Electronics, 1989, 19:10, 1300–1301

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© Steklov Math. Inst. of RAS, 2024