Longitudinal electron-beam-pumped CdHgTe laser

A CdHgTe/CdTe heterostructure grown by liquid phase epitaxy was used to develop a laser. The CdHgTe epitaxial laser formed the active region whilst the CdTe substrate formed the passive part of the resonator. At an electron energy of 50 keV and a temperature of 77 K, lasing was obtained at 1.48 μm in Cd_0.65Hg_0.35Te. The maximum external differential efficiency was 3.4%.