Nonradiative losses in InGaAsP/InP heterostructures

A study was made of the dependence of the luminescence intensity and of the excess-carrier lifetime on the pump current in diode heterostructures emitting at wavelengths of 1.06, 1.27, and 1.55 μm. An estimate was obtained of the Auger recombination coefficient amounting to 0.9 X 10 ^– 29, 3.1 X 10 ^– 29, and 1.1 X 10 ^– 28 cm⁶/s at these three wavelengths, respectively.