Possible use of metal-insulator-semiconductor structures with GaP–GaAs heterojunctions in optical data processing

A study was made of the possibility of using metal-insulator-semiconductor (MIS) structures with GaP–GaAs heterojunctions as electrically and optically controlled transparencies. The results obtained were used to estimate the attainable contrast and efficiency of these transparencies. Light pulses of 10^–6 J/mm² energy, produced by an He–Ne laser, were used to record a diffraction grating with a spatial frequency in excess of 180 lines/mm and a diffraction efficiency of 3×10^–3.