Abstract:
An analysis is made of the difficulties encountered in the construction of optical transistors based on self-switching of radiation in tunnel-coupled optical waveguides. A method is suggested which avoids a number of physical difficulties. An estimate is obtained of the influence of various negative factors such as losses in the coupled waveguides, imperfections of these waveguides, and secondary nonlinear effects (stimulated Brillouin and Raman scattering, breakdown, etc.).