The chemistry of the compound semiconductor-intrinsic insulator interface

Processes leading to the growth of intrinsic insulators (oxides, sulfides, and fluorides) on the surfaces of semiconductors of the III–V, II–VI, and IV–VI groups as well as their solid solutions are analysed with the aid of classical thermodynamics. Their phase compositions, found from the equilibrium phase diagram, are compared with the compositions found as a result of experimental studies of the semiconductor-insulator interface. It is shown that there is a relation between the characteristic features of the equilibrium phase diagram (in particular the segregation of a metal or nonmetal at the interface), the type of intrinsic lattice defects, and the electrophisical properties of the interface. The possible ways of creating an ideal compound semiconductor-insulator interface are considered. The bibliography includes 171 references.