Oxidation of Silicon

Work on the oxidation of silicon in various gaseous media has been reviewed. Particular attention has been paid to the mechanism of formation and the kinetics of the growth of oxide films on silicon during high-temperature oxidation. Published data on the composition and structure of the resulting film of reaction products, the dependence of the rate of oxidation on the pressure of the oxidising medium, and the possible participation of silicon ions in the growth of the oxide film have been discussed.
The bibliography contains 120 references.