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JOURNALS // Uspekhi Khimii // Archive

Usp. Khim., 1972 Volume 41, Issue 9, Pages 1713–1734 (Mi rcr2569)

This article is cited in 2 papers

Mechanism of the Action of an Electron Beam on Organic Photoresists

S. A. Neustroev, E. B. Sokolov

Moscow Electronic Engineering Institute

Abstract: The literature dealing with the decomposition of positive and negative photoresists by actinic light and by electron bombardment is reviewed, and the action of a stream of electrons on other organic materials, metals, and inorganic dielectrics is discussed. A mechanism producing internal irradiation of the resist is considered: the incident electrons excite the resist molecules into fluorescence and phosphorescence.
The influence of the (metallic or dielectric) substrate on the achievement of the required line widths is discussed. It is shown that the cross-linking of a negative photoresist under the influence of an electron beam occurs by free-radical polymerisation.
65 references.

UDC: 541.14

DOI: 10.1070/RC1972v041n09ABEH002094


 English version:
Russian Chemical Reviews, 1972, 41:9, 795–806

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