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JOURNALS // Solid-State Electronics // Archive

Solid-State Electronics, 2012, Volume 70, Pages 106–113 (Mi sse1)

This article is cited in 5 papers

Quantum simulation of an ultrathin body field-effect transistor with channel imperfections

V. Vyurkovab, I. Semenikhinab, S. Filippovab, A. Orlikovskyab

a Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia
b Moscow Institute of Physics and Technology, Moscow Region, Russia

Language: English

DOI: 10.1016/j.sse.2011.11.021



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