Abstract:
We investigated the kinetics of photoresistor photoconductivity with deep foreign centers theoretically. Typical parameters of semiconductors $A^{2}B^{6}$ and $A^{3}B^{5}$ were used. We considered the influence of electric field and electrons and holes border diffusion to photosensitivity of photoresistor.
Keywords:the kinetics of photoconductivity, recombination centers, lifetime of electrons and holes, $A^{2}B^{6}$ and $A^{3}B^{5}$, surface recombination.
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