Numerical modelling of probability of inclusion of microplasma c participation of the deep centers in $p$–$n$–junction

Influence of the deep centers on a statistical delay of breakdown of microplasma in $p$–$n$–junction is modelled. The numerical computation of the probability of microplasma inclusion in GaP p-n-junction has been made in the case of the charge carriers emission through the simple two-charged and also multicharged generation-recombination center. It is established that the change of the deep levels charges by means of partial reduction of reverse voltage in p-n-junction may result in some peculiarities concerning the distribution of the statistical delay of microplasma breakdown. The duration of breakdown delay changes.