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JOURNALS // Teplofizika vysokikh temperatur // Archive
TVT, 2018 Volume 56, Issue 5, Pages 841–843 (Mi tvt10984)
This article is cited in 4 papers

Short Communications

Electrical resistivity of silicated silicon carbide

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow

Abstract: We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of $1200$–$2200$ K.

UDC: 537.311.31,661.665,546.28

Received: 28.12.2017

DOI: 10.31857/S004036440003381-3


 English version: High Temperature, 2018, 56:5, 824–826

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© Steklov Math. Inst. of RAS, 2024