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JOURNALS // Teplofizika vysokikh temperatur // Archive

TVT, 2019 Volume 57, Issue 2, Pages 301–303 (Mi tvt10995)

This article is cited in 2 papers

Short Communications

Emittance properties of siliconized silicon carbide in the temperature range of $1400$$2200$ K

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow

Abstract: The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of $1400$$2200$ K are presented for the first time.

UDC: 535.233.213

Received: 11.01.2018
Accepted: 10.10.2018

DOI: 10.1134/S0040364419020091


 English version:
High Temperature, 2019, 57:2, 272–274

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© Steklov Math. Inst. of RAS, 2024