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JOURNALS
// Teplofizika vysokikh temperatur
// Archive
TVT,
2019
Volume 57,
Issue 2,
Pages
301–303
(Mi tvt10995)
This article is cited in
2
papers
Short Communications
Emittance properties of siliconized silicon carbide in the temperature range of
$1400$
–
$2200$
K
A. V. Kostanovskii
,
M. G. Zeodinov
,
M. E. Kostanovskaya
,
A. A. Pronkin
Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
Abstract:
The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of
$1400$
–
$2200$
K are presented for the first time.
UDC:
535.233.213
Received:
11.01.2018
Accepted:
10.10.2018
DOI:
10.1134/S0040364419020091
Fulltext:
PDF file (216 kB)
References
Cited by
English version:
High Temperature, 2019,
57
:2,
272–274
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2024