Investigation of the high-temperature properties of zirconium nitride by impulse current heating method

The zirconium nitride specimens were obtained as a thin $(2.5\,\mu$m$)$ layer deposited on the insulating K-$8$ glass substrates by the magnetron sputtering technique. The impulse current heating permitted reaching the nitride melting region in $5\,\mu$s. The current, the voltage, and the radiation at the wavelength of $856$ nm were registered. The energy input (the enthalpy), $E$, the heat capacity, $C_p$, the resistivity, $\rho$ (referred to the initial specimen dimensions), and the temperature, $T$, were calculated. The results on the resistivity, the specific heat, and the melting temperature $(2700$ K$)$ of the zirconium nitride under a high content of nitrogen (about $49$ at $\%$) and oxygen (about $11$ at $\%$) in the specimen were obtained. The limit temperature in the investigation was as high as $3400$ K.