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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive
UFN, 1960 Volume 72, Number 3, Pages 495–520 (Mi ufn12390)
This article is cited in 325 papers

REVIEWS OF TOPICAL PROBLEMS

Growth of silicon crystals free from dislocations

W. Ñ. Dash


DOI: 10.3367/UFNr.0072.196011d.0495


 English version: Physics–Uspekhi, 1959, 30, 459–474

© Steklov Math. Inst. of RAS, 2024