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UFN, 1998 Volume 168, Number 7, Pages 804–808 (Mi ufn1500)

This article is cited in 14 papers

CONFERENCES AND SYMPOSIA

Coulomb gap and metal–insulator transitions in doped semiconductors

A. G. Zabrodskii

Ioffe Institute, St. Petersburg

PACS: 71.30.+h

Received: June 1, 1998

DOI: 10.3367/UFNr.0168.199807h.0804


 English version:
Physics–Uspekhi, 1998, 41:7, 722–726

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