RUS
ENG
Full version
JOURNALS
// Uspekhi Fizicheskikh Nauk
// Archive
UFN,
1998
Volume 168,
Number 7,
Pages
804–808
(Mi ufn1500)
This article is cited in
14
papers
CONFERENCES AND SYMPOSIA
Coulomb gap and metal–insulator transitions in doped semiconductors
A. G. Zabrodskii
Ioffe Institute, St. Petersburg
PACS:
71.30.+h
Received:
June 1, 1998
DOI:
10.3367/UFNr.0168.199807h.0804
Fulltext:
PDF file (930 kB)
Cited by
English version:
Physics–Uspekhi, 1998,
41
:7,
722–726
Bibliographic databases:
©
Steklov Math. Inst. of RAS
, 2025