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UFN, 1998 Volume 168, Number 8, Pages 817–842 (Mi ufn1504)

This article is cited in 140 papers

REVIEWS OF TOPICAL PROBLEMS

Thallium dopant in lead chalcogenides: investigation methods and peculiarities

S. A. Nemov, Yu. I. Ravich

Saint-Petersburg State Technical University

Abstract: The body of experimental and theoretical data on transport phenomena, optical absorption, low-temperature heat capacity, tunnelling spectroscopy, magnetic susceptibility, superconductivity, and self-compensation are summarized for thallium-doped lead chalcogenides PbM (M = Te, Se, S) and PbM-based solid solutions. The physical properties of the semiconducting compounds are explained in a unified manner using the concept of resonance Tl states located in the valence band of the compound. The basic parameters of resonance impurity states are estimated and their dependences on temperature, pressure, and material composition are determined.

PACS: 71.20.-b, 71.55.-i, 74.70.-b, 78.90.+t

Received: July 1, 1998

DOI: 10.3367/UFNr.0168.199808a.0817


 English version:
Physics–Uspekhi, 1998, 41:8, 735–759

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