B. A. Volkov, L. I. Ryabova, D. R. Khokhlov, “Mixed-valence impurities in lead telluride-based solid solutions”, UFN, 2002, Volume 172, Number 8,Pages <nobr>875

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Mixed-valence impurities in lead telluride-based solid solutions

B. A. Volkov^a, L. I. Ryabova^b, D. R. Khokhlov^c

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Lomonosov Moscow State University, Faculty of Chemistry
^c Lomonosov Moscow State University, Faculty of Physics

Abstract: Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

PACS: 71.23.An, 71.55.-i, 85.60.Gz

Received: November 21, 2001

DOI: 10.3367/UFNr.0172.200208b.0875