Application and electronic structure of high-permittivity dielectrics

Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al$_2$O$_3$, HfO$_2$ and TiO$_2$.