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JOURNALS
// Uspekhi Fizicheskikh Nauk
// Archive
UFN,
2006
Volume 176,
Number 2,
Pages
222–227
(Mi ufn282)
This article is cited in
1
paper
CONFERENCES AND SYMPOSIA
Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions
E. B. Olshanetskii
a
,
V. Renard
b
,
Z. D. Kvon
a
,
I. V. Gornyi
cd
,
A. I. Toropov
a
,
J. C. Portal
b
a
Institute of Semiconductor Physics, SB RAS
b
GHML, MPI-FKF/CNRS, Grenoble
c
Institute for Nanotechnologies, Karlsruhe
d
Ioffe Physico-Technical Institute, Russian Academy of Sciences
PACS:
01.10.Fv
,
71.27.+a
,
71.30.+h
,
72.15.Rn
DOI:
10.3367/UFNr.0176.200602g.0222
Fulltext:
PDF file (1004 kB)
References
Cited by
English version:
Physics–Uspekhi, 2006,
49
:2,
211–216
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2025