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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 2006 Volume 176, Number 2, Pages 222–227 (Mi ufn282)

This article is cited in 1 paper

CONFERENCES AND SYMPOSIA

Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions

E. B. Olshanetskiia, V. Renardb, Z. D. Kvona, I. V. Gornyicd, A. I. Toropova, J. C. Portalb

a Institute of Semiconductor Physics, SB RAS
b GHML, MPI-FKF/CNRS, Grenoble
c Institute for Nanotechnologies, Karlsruhe
d Ioffe Physico-Technical Institute, Russian Academy of Sciences

PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn

DOI: 10.3367/UFNr.0176.200602g.0222


 English version:
Physics–Uspekhi, 2006, 49:2, 211–216

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© Steklov Math. Inst. of RAS, 2025