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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 2017 Volume 187, Number 2, Pages 173–191 (Mi ufn5605)

This article is cited in 37 papers

REVIEWS OF TOPICAL PROBLEMS

Third-generation Cu-In-Ga-(S, Se)-based solar inverters

G. F. Novikov, M. V. Gapanovich

Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: This paper reviews literature data on thin-film solar cells with absorber layers based on quaternary copper compounds Cu-In-Ga-(S, Se) (CIGS). The paper considers methods of preparation of CIGS layers and discusses the chemical composition, design features, and operating principles of CIGS-based solar cells. The bulk of the recent literature reveals how research in the field is starting to change: important results are being obtained by numerically simulating processes in thin-film solar cells; element concentration gradients in the CIGS structure, spatially nonuniform bandgap energy distribution, and layer grain boundaries are receiving increasing research attention for their respective roles, and the number of kinetic studies is increasing.

PACS: 81.05.Hd, 84.60.Jt, 88.40.fc, 88.40.jn

Received: March 23, 2016
Revised: June 3, 2016
Accepted: June 9, 2016

DOI: 10.3367/UFNr.2016.06.037827


 English version:
Physics–Uspekhi, 2017, 60:2, 161–178

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