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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 2018 Volume 188, Number 11, Pages 1209–1225 (Mi ufn6196)

This article is cited in 10 papers

CONFERENCES AND SYMPOSIA

Quantum logic gates

A. A. Gorbatsevicha, N. M. Shubinab

a Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow State Institute of Electronic Technology (Technical University)

Abstract: We discuss the strategies to construct logic gates based on solid-state and molecular structures in which information transformation processes are governed by quantum mechanical principles and which, similarly to the classical complementary metal–oxide–semiconductor (CMOS) structures, do not consume power in the stationary state. In the first-generation quantum analogs of CMOS gates, logical state switching occurs by fast quantum mechanical tunneling processes, but the transfer characteristics are determined by classical diffusion–drift carrier transport. The second-generation quantum analogs of CMOS systems are open quantum systems in which charge carrier transport occurs coherently. The development of atomic-precision lithography will allow wide use of quantum molecular logic gates in traditional computer architectures.

Keywords: quantum transport, resonant tunneling, quantum interference, non-Hermitian Hamiltonian, $PT$ symmetry, exceptional point, coalescence of resonances, logic gate, complementary metal–oxide–semiconductor (CMOS) transistor, quantum inverter, switching voltage, transfer characteristics, nanoelectronics, molecular electronics.

PACS: 03.65.Nk, 03.65.Xp, 85.35.-p, 85.65.+h


Accepted: December 13, 2017

DOI: 10.3367/UFNr.2017.12.038310


 English version:
Physics–Uspekhi, 2018, 61:11, 1100–1115

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