SiC-based electronics (100th anniversary of the Ioffe Institute)

We review the history and modern state of silicon carbide and SiC-based devices. The main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC devices is presented. The main problems that occur in developing SiC equipment and prospects for designing and developing such equipment are analyzed.