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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 1989 Volume 158, Number 4, Pages 581–604 (Mi ufn7683)

This article is cited in 11 papers

REVIEWS OF TOPICAL PROBLEMS

Quasiamorphous semiconductors

O. A. Golikova

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

Abstract: The experimental data on the electrical, thermal, and optical properties of high-boron compounds and modifications of boron–refractory crystals distinguished by specific and complicated structure–are reviewed. It is shown that depending on the complexity of the crystalline structure the properties of the materials transform, systematically approaching the properties characteristic of amorphous semiconductors; a new class of materials is thus identified–quasiamorphous semiconductors. In the limiting case of the most complicated structures, they can be regarded as natural structural models of amorphous semiconductors.

UDC: 621.315.592

PACS: 61.43.Dq, 72.80.Ng, 71.23.Cq

DOI: 10.3367/UFNr.0158.198908b.0581


 English version:
Physics–Uspekhi, 1989, 32:8, 665–677


© Steklov Math. Inst. of RAS, 2024