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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 1986 Volume 148, Number 1, Pages 35–53 (Mi ufn8055)

This article is cited in 9 papers

CELEBRATING 25 YEARS OF THE LASER

Semiconductor lasers

N. G. Basov, P. G. Eliseev, Yu. M. Popov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

Abstract: Recent advances in the field of semiconductor lasers are treated–injection lasers and lasers excited with fast electrons. Considerable attention is paid to new, four–component heterostructures and ultrathin active layers for injection lasers. Data are given on the fundamental fields of applications of semiconductor lasers.

UDC: 621.378.35

PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq

DOI: 10.3367/UFNr.0148.198601c.0035


 English version:
Physics–Uspekhi, 1986, 29:1, 20–30


© Steklov Math. Inst. of RAS, 2024