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JOURNALS // Uspekhi Fizicheskikh Nauk // Archive

UFN, 1985 Volume 147, Number 3, Pages 523–558 (Mi ufn8396)

This article is cited in 57 papers

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Defect formation in solids by decay of electronic excitations

M. I. Klingera, Ch. B. Lushchikb, T. V. Mashovetsa, G. A. Kholodarc, M. K. Sheĭnkmand, M. A. Élangob

a Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
b Institute of Physics of the Academy of Sciences of the Èstonian SSR
c National Taras Shevchenko University of Kyiv
d Institute of Semiconductor Physics, Kiev

Abstract: We consider a new type of nonradiative transitions in nonmetallic solids. The transitions are not accompanied by heat release but by large (compared with interatomic distances) displacements of individual atoms. These instabilities (electrostatic, vibronic, structural), which lead to formation of defects in solid crystals and glasses, are classified. We describe defect-formation processes both in ionic crystals upon decay of self-trapping excitons, and in semiconductors following multiple ionization of atoms near pre-existing charged impurity centers. The mechanisms whereby complex defects are restructured in semiconductors when nonequilibrium current carriers are introduced and when electrons and holes recombine are discussed. The role of current carriers in thermal production of defects is considered. The mechanism of formation of peculiar defects in glassy semiconductors is discussed.

UDC: 538.95

PACS: 61.72.Cc, 71.35.Aa, 61.43.Dq, 61.82.Fk

DOI: 10.3367/UFNr.0147.198511d.0523


 English version:
DOI: 10.1070/PU1985v028n11ABEH003977


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