H. S. Hakobyan, “Plasmonic mode confinement in InAs-SiO<nobr>$_2$</nobr>-Si waveguide in Terahertz region”, Proceedings of the YSU, Physical and Mathematical Sciences, 2011, Issue 3,Pages <nobr>58

Physics

Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region

H. S. Hakobyan

Chair of Microwave Radiophysics and Telecommunication, YSU

Abstract: The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated. It is shown that InAs-SiO$_2$-Si structure supports strongly confined guided mode with а sizes $0.0016 \lambda\times 0.02\lambda$ at $1$ THz.

Keywords: terahertz, waveguides, surface plasmons.

Received: 13.12.2010
Accepted: 15.02.2011

Language: English