Auger-transition of electrons to the condensed state on the dislocations in semiconductors

Auger transition of a free electron to an edge dislocation is considered in the $n$-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called "condenson"). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy.