The dependence of characteristics of In$_{0,5}$Ga$_{0,5}$P alloy on the lattice temperature and the impurity concentration in high electric fields

The influence of lattice temperature, ionized and neutral impurity concentration on characteristics of In$_{0,5}$Ga$_{0,5}$P alloy in high electric fields has been studied by averaging of Boltzmann kinetic equation. It has been shown that the increasing of impurity concentration as well as of the lattice temperature leads to decreasing of the values of electrons maximal drift velocity, their diffusion coefficient and mobility, and increasing of the value of threshold field.