Investigation of heating and recrystallization of implanted silicon under pulse light irradiation

A noncontact method was suggested and applied to investigate the heating dynamics and solid-phase recrystallization of implanted semiconductors during pulsed light annealing. This method is based on the recording of optical diffraction signals from special periodic structures prepared in advance. The method makes it possible to record the temperature and duration of solid-phase recrystallization with high time resolution, as well as to determine the incipient melting time of the ion-implanted semiconductor layer.