Abstract:
The photoluminescence and electron spin resonance of LPCVD silicon nitride films implanted with nitrogen
ions and annealed at 800 and 1200 °C have been investigated. It was shown that rapid thermal annealing for 3 min at 800 °C
results in decreasing photoluminescence signal from un-implanted film while the annealing temperature increase to 1200 °C leads
to the enhanced blue-green emission. The PL is completely extinguished by nitrogen implantation due to radiation damage.
However, the effect of increasing photoluminescence intensity at blue-green range after annealing at 1200 °C can be amplified by
preliminary nitrogen implantation with 1*10 $^{16}$$cì^{-2}$ fluence. It proves the contribution of amorphous silicon nitride intrinsic
defects (N-centers) to the luminescence at the high-energy spectral range.
