Abstract:
ZnO nanoclusters obtained by electrochemical deposition (ECD) of zinc in track template a-SiO$_2$/Si-n have been studied. The structure SiO$_2$/Si was irradiated on a DC-60 cyclotron with Xe 200 MeV ions (Ô = $10_{8}$ ions / $cm_{2}$), followed by chemical etching in an aqueous solution of hydrofluoric acid (HF). Electrochemical deposition (ECD) Zn in track template was performed in a potentiostatic mode. The surface of the samples after deposition was examined using a JSM 7500F scanning electron microscope. X-ray diffraction analysis (XRD) was performed using a D8 ADVANCE ECO X-ray diffractometer. According to X-ray diffraction data, zinc electroplating in a-SiO$_2$ / Si-n track templating led to the formation of ZnO nanocrystals with a zinc blende crystal structure (ZB). The current-voltage characteristics and photoluminescence of SiO$_2$/Si samples with ZnO ZB nanocrystals were studied. The structures of the photoluminescence spectra for ZnO ZB and ZnO WS (crystal structure - wurtzite) are the same, but the ratio of the intensities of the luminescence bands is different. A comparison of the band intensities showed that oxygen vacancies are the dominant defects in the obtained ZnO ZB structure.
