A. D. Ibrayeva, А. Janse van Vuuren, V. Skuratov, М. V. Zdorovets, “About determination of the threshold ionization energy losses for the latent tracks formation in crystalline Si$_3$N$_4$”, Bulletin of the L.N. Gumilyov Eurasian National University. Physics. Astronomy Series, 2019, Volume 129, Issue 4,Pages 8

About determination of the threshold ionization energy losses for the latent tracks formation in crystalline Si$_3$N$_4$

A. D. Ibrayeva^ab, А. Janse van Vuuren^c, V. Skuratov^d, М. V. Zdorovets^a

^a Astana Branch of the Institute of Nuclear Physics
^b Eurasian National University named after L.N. Gumilyov, Nur-Sultan
^c Centre for High Resolution Transmission Electron Microscopy of N. Mandela University
^d Joint Institute for Nuclear Research, Dubna, Moscow region

Abstract: This work is devoted to determine the threshold value of ionization energy loss $S_{et}$ for formation of latent tracks in polycrystalline silicon nitride based on the analysis of radiation-stimulated amorphization of material. Si$_3$N$_4$ (Al) specimens were irradiated with 167 MeV and 220 MeV Xe ions with high fluencies (6$\times$10$^{14}$ and 2$\times$10$^{14}$ cm$^{-2}$, respectively). According to cross-section TEM analysis of sample structures the lower boundary of $S_{et}$ has been found at level ˜ 6.7 keV/nm.

Received: 08.06.2019

DOI: 10.32523/2616-68-36-2019-129-4-8-14