Research Institute of Technical Information Security
Abstract:
Stability of weighted finite difference schemes used to simulate the drift
diffusion thermal transient processes in diode power semiconductor structures
is studied with consideration of parasitic and load elements. It is shown that
the finite difference scheme for the continuity equation might be
unstable with an oscillating behavior of the solution in a wide range of the
time step for the weight values between 0.5 and 0.7.