Numerical modeling and computer algorithm for the process of segregation of alloy impurities at the boundary of an oxidation wave in semiconductor substrates

An approach to the approximate modeling of complex physico-chemical processes of segregation of alloy impurities implanted in a base material is considered for the case when an oxidation wave propagates along it. A computer algorithm that realizes this approach is given. Numerical results obtained for the segregation of boron, arsenic, phosphorus, and antimony in silicon at the boundary “silicon/silicon dioxide” are discussed.