A. L. Alexandrov, G. A. Tarnavskii, S. I. Shpak, A. I. Gulidov, M. S. Obrecht, “Numerical simulation for the problem of dynamics of oxide film growth in semiconductor substrates on the basis of geometrical approach and the Deal-Grove method”, Num. Meth. Prog., 2001, Volume 2, Issue 1,Pages <nobr>92

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Numerical simulation for the problem of dynamics of oxide film growth in semiconductor substrates on the basis of geometrical approach and the Deal-Grove method

A. L. Alexandrov^a, G. A. Tarnavskii^a, S. I. Shpak^a, A. I. Gulidov^a, M. S. Obrecht^b

^a Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^b University of Waterloo

Abstract: An approximate simulation for the dynamics of oxide film growth in semiconductor substrates is developed. A generalization of the 1D Deal-Grove method to 2D problems is proposed on the basis of geometrical approach. Some numerical results are given for the following cases: 1) the growth of a subregion for SiO2 under oxidation in various mediums (O2 or H2O) and 2) the dynamics of oxide/material and oxide/oxidant boundaries in a wide range of constitutive parameters and nitride masks covering a part of the silicon surface.

Keywords: film growth, material oxidation, nitride masks, numerical simulation, semiconductors.

UDC: 519.2:541.1