M. B. Shalimova, V. S. Afanaskov, E. N. Khavdey, “Mechanisms of degradation of electrophysical characteristics of mos-structures with high-<nobr>$k$</nobr> dielectrics”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2013, Issue 3(104),Pages <nobr>107

Physics

Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics

M. B. Shalimova^a, V. S. Afanaskov^a, E. N. Khavdey^b

^a Samara State University, Samara, 443011, Russian Federation
^b P. N. Lebedev Physical Institute, Samara, 443011, Russian Federation

Abstract: Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of МОS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-$k$ dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.

Keywords: MOS capacitors, reliability, oxide breakdown; gate dielectric; oxides of other rare earth elements.

UDC: 621.382.2

Received: 02.03.2013
Revised: 02.03.2013