V. I. Chepurnov, K. P. Sivakova, A. A. Ermoshkin, “Peculiarities of nanopoint damage process in the structure of <i>por-SiC/Si</i>, obtained by diffusion technology for chemical sensors”, Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2011, Issue 2(83),Pages <nobr>179

This article is cited in 1 paper

Physics

Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors

V. I. Chepurnov^a, K. P. Sivakova^a, A. A. Ermoshkin^b

^a Dept. of Solid State Electronics and Nano Technology, Samara State University, Samara, 443011, Russian Federation
^b Dept. of of Metallurgy, Powder Metallurgy, Samara State Technical University, Samara, 443100, Russian Federation

Abstract: Heteroepitaxy supported silicon carbide films as a perspective material for high-temperature electronics is considered. In the paper the analysis of the point damage process in homogeneous $\beta$-$SiC$ phase based on silicon matrix and gas phase hydrocarbons at 1360–1380$\,^\circ\!$C temperature range and dopant of Ga under normal pressure is given.

Keywords: nano point defect formation, solid-state chemical gas sensor, por-SiC/Si, diffusion technology.

UDC: 621.382

Received: 18.11.2010
Revised: 18.11.2010