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JOURNALS // Vestnik Sankt-Peterburgskogo Universiteta. Seriya 10. Prikladnaya Matematika. Informatika. Protsessy Upravleniya // Archive

Vestnik S.-Petersburg Univ. Ser. 10. Prikl. Mat. Inform. Prots. Upr., 2022 Volume 18, Issue 1, Pages 52–62 (Mi vspui514)

This article is cited in 1 paper

Applied mathematics

Calculation of the ionization potential of zinc and graphene phthalocyaninates on the surface of dielectrics

D. Yu. Kuranov, T. A. Andreeva, M. E. Bedrina

St Petersburg State University, 7–9, Universitetskaya nab., St Petersburg, 199034, Russian Federation

Abstract: A mathematical model is proposed for calculating the ionization potentials of molecules on the surface of dielectrics in order to quantify changes in the electronic characteristics of materials on a substrate. The semiconductor and photoelectronic properties of nanosystems based on phthalocyanine derivatives are determined by the electronic structure of molecules. Based on the zinc phthalocyaninate molecule ZnC$_{32}$N$_8$H$_{16}$, model structures are constructed that increase this molecule by attaching benzene rings ZnC$_{48}$N$_8$H$_{24}$, ZnC$_{64}$N$_8$H$_{32}$ and a model simulating the film structure of Zn$_4$C$_{120}$N$_{32}$ H$_{48}$. Graphene was considered as a nanostructure modeling a fragment of a monomer lm. The ionization potentials of these compounds on the surface of magnesium oxide, sodium chloride and silicon are calculated. In the presence of a substrate, the ionization potentials of all nanostructures decrease, while the values of the surface ionization potentials remain fundamentally dierent in their magnitude for all compounds. The compound ZnC$_{64}$N$_8$H$_{32}$ sprayed onto the surface exhibits the best photoelectronic properties, its surface ionization potential is comparable to graphene.

Keywords: phthalocyanine zinc, graphene, structure, dielectric surface, ionization potential.

UDC: 519.63, 51-73

MSC: 82D80

Received: November 6, 2021
Accepted: February 1, 2022

DOI: 10.21638/11701/spbu10.2022.104



© Steklov Math. Inst. of RAS, 2024