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JOURNALS // Vestnik Yuzhno-Ural'skogo Gosudarstvennogo Universiteta. Seriya "Matematika. Mekhanika. Fizika" // Archive

Vestn. Yuzhno-Ural. Gos. Un-ta. Ser. Matem. Mekh. Fiz., 2024 Volume 16, Issue 3, Pages 50–61 (Mi vyurm608)

Physics

The evolution of a Ti film/silumin substrate system irradiated by a pulse electron beam

D. V. Zaguliaeva, Yu. F. Ivanovb, O. S. Tolkachevb, V. V. Shlyarova, Yu. A. Shlyarovaa

a Siberian State Industrial University, Novokuznetsk, Russian Federation
b Institute of High Current Electronics SB RAS, Tomsk, Russian Federation

Abstract: The electron beam treatment of metal surfaces involves the use of intense pulsed electron beams to improve a wide range of surface properties of different materials. Research has shown that it can lead to a marked reduction in surface roughness and porosity and a marked increase in tensile strength and ductility. Processed samples also have improved hardness, wear resistance, and anti-corrosion properties, which emphasizes the effectiveness of electron beam surface treatment in materials science.
This work studies the irradiation of a Ti film/silumin substrate system showing it leads to the transformation of both the Ti film and the silumin layer with different energy densities, which has a different effect on the structure and composition. When treated with an electron beam at an energy density of 30 J/cm$^2$, the Ti film and the silumin layer undergo complete dissolution, resulting in a complex submicron crystalline structure characterized by the presence of silicon particles distributed along grain boundaries. Irradiation with an electron beam of the Ti film/silumin substrate system at different energy densities (10, 15, 30 J/cm$^2$) leads to a change in surface morphology, crystallite size, and phase composition, and an increase in energy density leads to the melting of the Ti film and the silumin layer.

Keywords: silumin, titanium, film/substrate system, pulsed electron beam, elemental and phase composition, defect substructure.

UDC: 621.789:538.911

Received: 05.04.2024

DOI: 10.14529/mmph240308



© Steklov Math. Inst. of RAS, 2024